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VCE IC
= =
3300 V 1200 A
ABB HiPakTM IGBT Module
5SNA 1200E330100
Doc. No. 5SYA1556-03 May 05
* Low-loss, rugged SPT chip-set * Smooth switching SPT chip-set for good EMC * Industry standard package * High power density * AlSiC base-plate for high power cycling capability * AlN substrate for low thermal resistance Maximum rated values
Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage Total power dissipation DC forward current Peak forward current Surge current IGBT short circuit SOA Isolation voltage Junction temperature Junction operating temperature Case temperature Storage temperature Mounting torques
1) 2) 2) 1)
Symbol VCES IC ICM VGES Ptot IF IFRM IFSM tpsc Visol Tvj Tvj(op) Tc Tstg Ms Mt1 Mt2
Conditions VGE = 0 V Tc = 80 C tp = 1 ms, Tc = 80 C
min
max 3300 1200 2400
Unit V A A V W A A A s V C C C C Nm
-20 Tc = 25 C, per switch (IGBT)
20 11750 1200 2400
VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave VCC = 2500 V, VCEM CHIP 3300 V VGE 15 V, Tvj 125 C 1 min, f = 50 Hz -40 -40 -40 Base-heatsink, M6 screws Main terminals, M8 screws Auxiliary terminals, M4 screws 4 8 2
12000 10 6000 150 125 125 125 6 10 3
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SNA 1200E330100
IGBT characteristic values
Parameter Collector (-emitter) breakdown voltage Collector-emitter 4) saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
3)
Symbol V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres td(on) tr td(off) tf
Conditions VGE = 0 V, IC = 10 mA, Tvj = 25 C IC = 1200 A, VGE = 15 V VCE = 3300 V, VGE = 0 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C
min 3300 2.7 3.5
typ
max
Unit V
3.1 3.8
3.4 4.3 12 120
V V mA mA nA V C
VCE = 0 V, VGE = 20 V, Tvj = 125 C IC = 240 mA, VCE = VGE, Tvj = 25 C IC = 1200 A, VCE = 1800 V, VGE = -15 V .. 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C VCC = 1800 V, IC = 1200 A, RG = 1.5 , VGE = 15 V, L = 100 nH, inductive load VCC = 1800 V, IC = 1200 A, RG = 1.5 , VGE = 15 V, L = 100 nH, inductive load VCC = 1800 V, IC = 1200 A, VGE = 15 V, RG = 1.5 , L = 100 nH, inductive load VCC = 1800 V, IC = 1200 A, VGE = 15 V, RG = 1.5 , L = 100 nH, inductive load Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C
-500 5.5 12.1 187 11.57 2.22 400 400 175 200 940 1070 350 440 1340
500 7.5
nF
ns ns ns ns
Turn-on switching energy
Eon
mJ 1890 1420 mJ 1950 5000 10 A nH m
Turn-off switching energy Short circuit current Module stray inductance Resistance, terminal-chip
3) 4)
Eoff ISC L CE RCC'+EE'
tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 2500 V, VCEM CHIP 3300 V TC = 25 C TC = 125 C
0.06 0.085
Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1556-03 May 05 page 2 of 9
5SNA 1200E330100
Diode characteristic values
Parameter Forward voltage
6)
5)
Symbol VF Irr Qrr trr Erec
Conditions IF = 1200 A Tvj = 25 C Tvj = 125 C Tvj = 25 C VCC = 1800 V, IF = 1200 A, VGE = 15 V, RG = 1.5 L = 100 nH inductive load Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C
min 2.0 2.0
typ 2.3 2.35 1100 1350 715 1280 520 1450 840 1530
max 2.6 2.6
Unit V A C ns mJ
Reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy
5) 6)
Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level
Thermal properties
Parameter IGBT thermal resistance junction to case
7)
Symbol Rth(j-c)IGBT Rth(j-c)DIODE
2)
Conditions
min
typ
max
Unit
0.0085 K/W 0.017 K/W per module, grease = 1W/m x K 0.006 K/W
Diode thermal resistance junction to case Thermal resistance case to heatsink
2)
Rth(c-s)
For detailed mounting instructions refer to ABB Document No. 5SYA2039
Mechanical properties
Parameter Dimensions Clearance distance in air Surface creepage distance Mass
7)
7)
Symbol LxW da ds m
x
Conditions according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term:
min 23 19 33 32
typ
max
Unit mm mm mm
H Typical , see outline drawing
190 x 140 x 38
1380
g
Thermal and mechanical properties according to IEC 60747 - 15
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1556-03 May 05 page 3 of 9
5SNA 1200E330100
Electrical configuration
Outline drawing
2)
Note: all dimensions are shown in mm
2)
For detailed mounting instructions refer to ABB Document No. 5SYA2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1556-03 May 05 page 4 of 9
5SNA 1200E330100
2400
2400 VCE = 20V
2000 25 C 1600 125 C IC [A] IC [A] 1200
2000
1600
1200
800
800 125C
400 VGE = 15 V 0 0 1 2 3 VCE [V] 4 5 6
400
25C
0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE [V]
Fig. 1
Typical on-state characteristics, chip level
Fig. 2
Typical transfer characteristics, chip level
2400 17 V 2000 15 V 13 V 1600 11 V IC [A]
2400 17 V 2000 15 V 13 V 1600 11 V
IC [A]
1200
1200
800 9V 400 Tvj = 25 C 0 0 1 2 VCE [V] 3 4 5
800 9V 400 Tvj = 125 C 0 0 1 2 3 4 5 6 7 VCE [V]
Fig. 3
Typical output characteristics, chip level
Fig. 4
Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1556-03 May 05 page 5 of 9
5SNA 1200E330100
6 VCC = 1800 V RG = 1.5 ohm VGE = 15 V Tvj = 125 C L = 100 nH
9 8 7 Eon 6 Eon, Eoff [J] 5 4 3 2 Eon VCC = 1800 V IC = 1200 A VGE = 15 V Tvj = 125 C L = 100 nH
5
4 Eon, Eoff [J]
3
Eoff
2
1 1
E SW [mJ] = 357 x 10 -6 x I C 2 + 2.4 x I C + 457
Eoff
0 0 500 1000 IC [A] 1500 2000 2500
0 0 5 RG [ohm] 10 15
Fig. 5
Typical switching energies per pulse vs collector current
Fig. 6
Typical switching energies per pulse vs gate resistor
10 td(off)
10 VCC = 1800 V IC = 1200 A VGE = 15 V Tvj = 125 C L = 100 nH tf td(on) td(on), tr, td(off), tf [s]
td(off)
td(on), tr, td(off), tf [s]
1
td(on)
1
tr
0.1
tr VCC = 1800 V RG = 1.5 ohm VGE = 15 V Tvj = 125 C L = 100 nH
tf
0.01 0 500 1000 IC [A] 1500 2000 2500
0.1 0 5 10 RG [ohm] 15 20
Fig. 7
Typical switching times vs collector current
Fig. 8
Typical switching times vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1556-03 May 05 page 6 of 9
5SNA 1200E330100
1000
20 VGE = 0V fOSC = 1 MHz VOSC = 50 mV Cies 15
VCC = 1800 V
100
VCC = 2500 V VGE [V]
C [nF]
10
Coes
10
Cres
5
IC = 1200 A Tvj = 25 C
1 0 5 10 15 20 VCE [V] 25 30 35
0 0 1 2 3 4 567 Qg [C] 8 9 10 11 12
Fig. 9
Typical capacitances vs collector-emitter voltage
Fig. 10
Typical gate charge characteristics
2.5 VCC 2500 V, Tvj = 125 C VGE = 15 V, RG = 1.5 ohm 2
1.5 ICpulse / IC 1 0.5 Chip Module 0 0 500 1000 1500 2000 VCE [V] 2500 3000 3500
Fig. 11
Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1556-03 May 05 page 7 of 9
5SNA 1200E330100
2000 1800 1600 Erec [mJ], Irr [A], Qrr [C] 1400 1200 1000 800 600 400 200
E rec [mJ] = -3.45 x 10 -4 x I F 2 + 1.45 x I F + 285
1800 VCC = 1800 V RG = 1.5 ohm VGE = 15 V Tvj = 125 C L = 100 nH Erec Qrr 1400 Erec [mJ], Irr [A], Qrr [Q] 1200 1000 800 600 400 200 0 0 500 1000 1500 IF [A] 2000 2500 3000 0 1 2 3 4 5 6 7 di/dt [kA/s] Erec
RG = 6.8 ohm RG = 2.2 ohm
1600
VCC = 1800 V IF = 1200 A Tvj = 125 C L = 100 nH
RG = 1.5 ohm RG = 1.0 ohm
Irr
Qrr
RG = 3.3 ohm
0
Fig. 12
Typical reverse recovery characteristics vs forward current
Fig. 13
Typical reverse recovery characteristics vs di/dt
2400
2800 VCC 2500 V di/dt 8000 A/s Tvj = 125 C
2000 25C 125C 1600
2400
2000
1600
IF [A] 1200
IR [A]
1200
800
800
400
400
0 0 1 2 VF [V] 3 4
0 0 500 1000 1500 2000 2500 VR [V] 3000 3500
Fig. 14
Typical diode forward characteristics, chip level
Fig. 15
Safe operating area diode (SOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1556-03 May 05 page 8 of 9
RG = 15 ohm
Irr
5SNA 1200E330100
0.1
Analytical function for transient thermal impedance:
Zth(j-h) [K/W] IGBT, DIODE Zth(j-c) Diode 0.01 Zth(j-c) IGBT
Z th (j-c) (t) = R i (1 - e -t/ i )
i =1
2 1.375 30.1 2.887 30.1 i
IGBT
n
1 5.854 207.4 11.54 203.6
3 0.641 7.55 1.229 7.53
4 0.632 1.57 1.295 1.57
5
Ri(K/kW) i(ms) Ri(K/kW) i(ms)
0.001
0.0001 0.001 0.01 0.1 t [s] 1 10
Fig. 16
Thermal impedance vs time
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors
DIODE
Doc. No. 5SYA1556-03 May 05

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